Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate Mosfets
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate MOSFETs gate material surrounds the channel in all direction , therefore it can overcome t...
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A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...
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Article history: Received 25 May 2015 Received in revised form 20 June 2015 Accepted 6 July 2015 Available online xxxx
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ژورنال
عنوان ژورنال: International Journal of VLSI Design & Communication Systems
سال: 2014
ISSN: 0976-1527,0976-1357
DOI: 10.5121/vlsic.2014.5308